Course name: Radiation Hard IC Design

Code: RHD

Training content

Topic 1 (4 hours) – Introduction

History of Rad-Hard IC design. Radiation environment. Effects on ICs. Charged and neutral particles and their interaction with matter.

Topic 2 (4 hours) – Radiation-matter Interaction

Radiation effects in the materials of a MOS transistor. Positive charge trapped in SiO2. Radiation induced traps in Si-SiO2 interface.

Topic 3 (4 hours) – Radiation Effects on MOS Transistor’s Electrical Parameters

Threshold voltage shift components. Leakage current and other parameters.

Topic 4 (4 hours) – Radiation Effects on CMOS Integrated Circuits

Total ionizing dose and single events effects. Soft and hard errors. Single Event Upset, Single Event Latch-Up.

Topic 5 (2 hours) – Technology Scaling and Radiation Effects

Beneficial and detrimental effects.

Topic 6 (2 hours) – Radiation Hardening by Technology

Hardening by process technology. SOI/SOS structures.

Topic 7 (4 hours) – Hardening by Layout

Enclosed layout transistors, their advantages and disadvantages. Guard rings.

Topic 8 (4 hours) – SEU Hardening Methods

Capacitive, resistive and drive strength hardening.

Topic 9 (6 hours) – SEU Hardened Storage Cells

DICE (Dual Interlocked Storage Cell). HIT (Heavy Ion Tolerant). Redundancy. EDAC (Error Detection and Correction).

Training purpose

• Understand how to design SoCs for applications in harsh environments.

References

• Update later